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Transistor
2SD1994A
Silicon NPN epitaxial planer type
For low-frequency power amplification and driver amplification Complementary to 2SB1322A
0.7
Unit: mm
6.90.1 4.0 2.50.1 (0.8)
(1.0) (0.2) 4.50.1
s Features
q q
q
Low collector to emitter saturation voltage VCE(sat). Output of 2 to 3W is obtained with a complementary pair with 2SB1322A. Allowing supply with the radial taping.
0.65 max.
(1.0)
14.50.5
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
(Ta=25C)
Ratings 60 50 5 1.5 1 1 150 -55 ~ +150 1cm2 Unit V V V A A W C C
0.45+0.10 -0.05 2.50.5 2.50.5
1.050.05
0.45+0.10 -0.05
Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg
1
2
3
Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available.
1:Emitter 2:Collector 3:Base MT-2-A1 Package
1.20.1 0.65 max. 0.45+0.1 - 0.05
Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion
or more, and the board
(HW type)
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25C)
Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob
*1
Conditions VCB = 20V, IE = 0 IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 500mA*2 VCE = 5V, IC = 1A*2 IC = 500mA, IB = 50mA*2 IC = 500mA, IB = 50mA*2 VCB = 10V, IE = -50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz
min
typ
max 0.1
(0.5)
Unit A V V V
60 50 5 85 50 160 100 0.2 0.85 200 11
*2
340
0.4 1.2
V V MHz
20
pF
Pulse measurement
*1h
FE1
Rank classification
Q 85 ~ 170 R 120 ~ 240 S 170 ~ 340
Rank hFE1
654
Transistor
PC -- Ta
1.2 1.50 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25C 1.25 1.0
2SD1994A
IC -- VCE
1.2 VCE=10V Ta=25C
IC -- I B
Collector power dissipation PC (W)
1.0
Collector current IC (A)
0.8
1.00
8mA 7mA 6mA 5mA 4mA
Collector current IC (A)
IB=10mA 9mA
0.8
0.6
0.75
0.6
0.4
0.50
3mA 2mA
0.4
0.2
0.25
1mA
0.2
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10
0 0 2 4 6 8 10 12
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base current IB (mA)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03
VBE(sat) -- IC
Base to emitter saturation voltage VBE(sat) (V)
IC/IB=10 100 30 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 100C IC/IB=10 500
hFE -- IC
VCE=10V
Forward current transfer ratio hFE
400
25C Ta=100C -25C
300 Ta=100C 25C 200 -25C 100
0.1
0.3
1
3
10
0.1
0.3
1
3
10
0 0.01 0.03
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
fT -- IE
200
Cob -- VCB
60
VCER -- RBE
Collector to emitter voltage VCER (V)
IE=0 f=1MHz Ta=25C 120 IC=10mA Ta=25C 100
Collector output capacitance Cob (pF)
VCB=10V Ta=25C
Transition frequency fT (MHz)
160
50
40
80
120
30
60
80
20
40
40
10
20
0 -1
0 -3 -10 -30 -100 1 3 10 30 100
0 0.1
0.3
1
3
10
30
100
Emitter current IE (mA)
Collector to base voltage VCB (V)
Base to emitter resistance RBE (k)
655
Transistor
ICEO -- Ta
104 VCE=10V 10 3 103
2SD1994A
Area of safe operation (ASO)
Single pulse Ta=25C ICP 1 0.3 0.1 0.03 0.01 0.003 IC t=1s t=10ms
102
10
1 0 20 40 60 80 100 120 140 160
Collector current IC (A)
ICEO (Ta) ICEO (Ta=25C)
0.001 0.1
0.3
1
3
10
30
100
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
656
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2001 MAR

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